ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 1 d escription the ACET4445B uses advanced trench technology to provide excellent r ds(on) , low gate charge. this device is suitable for use as a high side switch in smps and general purpose applications. ACET4445B is electrically identical. rohs compliant f eatures ? v ds (v) = 30v ? i d = 38a (vgs = 10v) ? r ds(on) =6.2m (v gs = 10v typ) ? r ds(on) < 8.9m (v gs = 4.5v typ) ? low qg ? 100% delta vsd tested ? 100% r g tested absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s 3 0 v gate - source voltage v gs s 20 v drain current (continuous) t c =25 o c i d 38 a t c = 100 o c 18 drain current (pulse) c i dm 60 drain current (continuous) t a =25 o c i dsm 11 a t a =70 o c 8 power dissipation b t c =25 o c p d 5 w t c =100 o c 3.2 power dissipation a t a =25 o c p d sm 2 w t a =70 o c 1.3 operating and storage temperat ure range t j , t stg - 55 to 150 o c thermal characteristics parameter symbol max units maximum junction - to - ambient a t Q 10s r ja 25 /w maximum junction - to - ambient a d steady - state 60 /w maximum junction - to - case steady - state r jc 4.2 /w
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 2 packaging type dfn 5*6 - 8 - ep ordering i nformation ace t 4445b xx + h p n : dfn 5 * 6 - 8 - ep pb - free halogen - free
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 3 electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min typ max unit static drain - source breakdown volt age v (br)dss v gs = 0v, i d =250 a 30 v zero gate voltage drain current i dss v ds = 30 v , v gs = 0v 1 a gate threshold voltage v gs (th) v gs = v ds , i ds =250 a 1 3 v gate leakage current i gss v gs = 20 v , v ds =0v 100 na drain - source on - state resistance r ds(on) v gs = 10 v , i d = 12 a 6.2 8.5 m v gs = 4.5 v , i d = 10 a 8.9 13 forward transconductance g fs vds=10v, id=12a 30 s diode forward voltage v s d isd=2a , vgs=0v 0.71 1.0 v maximum body - diode continuous current is 2 a switching total gate charge q g v ds = 1 5 v, i d = 12 a v gs = 5 v 7.5 nc gate - source charge q gs 1.3 gate - drain charge q gd 4.5 turn - on delay time t d(on) v d s = 1 5 v, v g s = 10 v r g en = 6 , r l = 15 10 ns turn - on rise time t f 8 turn - off delay time t d(off) 30 turn - off fall time t f 5 dynamic input capacita nce c iss v ds = 1 5 v, v gs =0v f= 1m hz 680 pf output capacitance c oss 150 reverse transfer capacitance c rss 70 note: a. the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction - to - case t hermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles t o keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. f. these curves are based on the junction - to - case thermal imped ence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed wi th the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 4 typical performance characteristics
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 5
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 6 typical perfor mance characteristics
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 7 packing information dfn 5*6 - 8 l - ep
ace t 4445b n - channel enhancement mode field effect transistor ver 1.1 8 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) supp ort or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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